Single-Cycle Atomic Layer Deposition on Bulk Wood Lumber for Managing Moisture Content, Mold Growth, and Thermal Conductivity.
Identifieur interne : 000117 ( Main/Exploration ); précédent : 000116; suivant : 000118Single-Cycle Atomic Layer Deposition on Bulk Wood Lumber for Managing Moisture Content, Mold Growth, and Thermal Conductivity.
Auteurs : Shawn A. Gregory [États-Unis] ; Connor P. Mcgettigan [États-Unis] ; Emily K. Mcguinness [États-Unis] ; David Misha Rodin [États-Unis] ; Shannon K. Yee [États-Unis] ; Mark D. Losego [États-Unis]Source :
- Langmuir : the ACS journal of surfaces and colloids [ 1520-5827 ] ; 2020.
Abstract
Wood is a universal building material. While highly versatile, many of its critical properties vary with water content (e.g., dimensionality, mechanical strength, and thermal insulation). Treatments to control the water content in wood have many technological applications. This study investigates the use of single-cycle atomic layer deposition (1cy-ALD) to apply <1 nm Al2O3, ZnO, or TiO2 coatings to various bulk lumber species (pine, cedar, and poplar) to alter their wettability, fungicidal, and thermal transport properties. Because the 1cy-ALD process only requires a single exposure to the precursors, it is potentially scalable for commodity product manufacturing. While all ALD chemistries are found to make the wood's surface hydrophobic, wood treated with TiO2 (TiCl4 + H2O) shows the greatest bulk water repellency upon full immersion in water. In situ monitoring of the chamber reaction pressure suggests that the TiCl4 + H2O chemistry follows reaction-rate-limited processing kinetics that enables deeper diffusion of the precursors into the wood's fibrous structure. Consequently, in humid or moist environments, 1cy-ALD (TiCl4 + H2O) treated lumber shows a 4 times smaller increase in thermal conductivity and improved resistance to mold growth compared to untreated lumber.
DOI: 10.1021/acs.langmuir.9b03273
PubMed: 32052971
Affiliations:
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Mcgettigan</name><affiliation wicri:level="1"><nlm:affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 </wicri:regionArea><wicri:noRegion>Georgia 30332 </wicri:noRegion></affiliation></author><author><name sortKey="Mcguinness, Emily K" sort="Mcguinness, Emily K" uniqKey="Mcguinness E" first="Emily K" last="Mcguinness">Emily K. Mcguinness</name><affiliation wicri:level="1"><nlm:affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 </wicri:regionArea><wicri:noRegion>Georgia 30332 </wicri:noRegion></affiliation></author><author><name sortKey="Rodin, David Misha" sort="Rodin, David Misha" uniqKey="Rodin D" first="David Misha" last="Rodin">David Misha Rodin</name><affiliation wicri:level="1"><nlm:affiliation>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 </wicri:regionArea><wicri:noRegion>Georgia 30332 </wicri:noRegion></affiliation></author><author><name sortKey="Yee, Shannon K" sort="Yee, Shannon K" uniqKey="Yee S" first="Shannon K" last="Yee">Shannon K. Yee</name><affiliation wicri:level="1"><nlm:affiliation>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 </wicri:regionArea><wicri:noRegion>Georgia 30332 </wicri:noRegion></affiliation></author><author><name sortKey="Losego, Mark D" sort="Losego, Mark D" uniqKey="Losego M" first="Mark D" last="Losego">Mark D. Losego</name><affiliation wicri:level="1"><nlm:affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 </wicri:regionArea><wicri:noRegion>Georgia 30332 </wicri:noRegion></affiliation></author></analytic><series><title level="j">Langmuir : the ACS journal of surfaces and colloids</title><idno type="eISSN">1520-5827</idno><imprint><date when="2020" type="published">2020</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Wood is a universal building material. While highly versatile, many of its critical properties vary with water content (e.g., dimensionality, mechanical strength, and thermal insulation). Treatments to control the water content in wood have many technological applications. This study investigates the use of single-cycle atomic layer deposition (1cy-ALD) to apply <1 nm Al<sub>2</sub>O<sub>3</sub>, ZnO, or TiO<sub>2</sub> coatings to various bulk lumber species (pine, cedar, and poplar) to alter their wettability, fungicidal, and thermal transport properties. Because the 1cy-ALD process only requires a single exposure to the precursors, it is potentially scalable for commodity product manufacturing. While all ALD chemistries are found to make the wood's surface hydrophobic, wood treated with TiO<sub>2</sub> (TiCl<sub>4</sub> + H<sub>2</sub>O) shows the greatest bulk water repellency upon full immersion in water. In situ monitoring of the chamber reaction pressure suggests that the TiCl<sub>4</sub> + H<sub>2</sub>O chemistry follows reaction-rate-limited processing kinetics that enables deeper diffusion of the precursors into the wood's fibrous structure. Consequently, in humid or moist environments, 1cy-ALD (TiCl<sub>4</sub> + H<sub>2</sub>O) treated lumber shows a 4 times smaller increase in thermal conductivity and improved resistance to mold growth compared to untreated lumber.</div></front></TEI><pubmed><MedlineCitation Status="PubMed-not-MEDLINE" Owner="NLM"><PMID Version="1">32052971</PMID><DateRevised><Year>2020</Year><Month>02</Month><Day>25</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1520-5827</ISSN><JournalIssue CitedMedium="Internet"><Volume>36</Volume><Issue>7</Issue><PubDate><Year>2020</Year><Month>Feb</Month><Day>25</Day></PubDate></JournalIssue><Title>Langmuir : the ACS journal of surfaces and colloids</Title><ISOAbbreviation>Langmuir</ISOAbbreviation></Journal><ArticleTitle>Single-Cycle Atomic Layer Deposition on Bulk Wood Lumber for Managing Moisture Content, Mold Growth, and Thermal Conductivity.</ArticleTitle><Pagination><MedlinePgn>1633-1641</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/acs.langmuir.9b03273</ELocationID><Abstract><AbstractText>Wood is a universal building material. While highly versatile, many of its critical properties vary with water content (e.g., dimensionality, mechanical strength, and thermal insulation). Treatments to control the water content in wood have many technological applications. This study investigates the use of single-cycle atomic layer deposition (1cy-ALD) to apply <1 nm Al<sub>2</sub>O<sub>3</sub>, ZnO, or TiO<sub>2</sub> coatings to various bulk lumber species (pine, cedar, and poplar) to alter their wettability, fungicidal, and thermal transport properties. Because the 1cy-ALD process only requires a single exposure to the precursors, it is potentially scalable for commodity product manufacturing. While all ALD chemistries are found to make the wood's surface hydrophobic, wood treated with TiO<sub>2</sub> (TiCl<sub>4</sub> + H<sub>2</sub>O) shows the greatest bulk water repellency upon full immersion in water. In situ monitoring of the chamber reaction pressure suggests that the TiCl<sub>4</sub> + H<sub>2</sub>O chemistry follows reaction-rate-limited processing kinetics that enables deeper diffusion of the precursors into the wood's fibrous structure. Consequently, in humid or moist environments, 1cy-ALD (TiCl<sub>4</sub> + H<sub>2</sub>O) treated lumber shows a 4 times smaller increase in thermal conductivity and improved resistance to mold growth compared to untreated lumber.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Gregory</LastName><ForeName>Shawn A</ForeName><Initials>SA</Initials><Identifier Source="ORCID">http://orcid.org/0000-0002-1027-0675</Identifier><AffiliationInfo><Affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo><AffiliationInfo><Affiliation>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>McGettigan</LastName><ForeName>Connor P</ForeName><Initials>CP</Initials><AffiliationInfo><Affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>McGuinness</LastName><ForeName>Emily K</ForeName><Initials>EK</Initials><Identifier Source="ORCID">http://orcid.org/0000-0003-4896-248X</Identifier><AffiliationInfo><Affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Rodin</LastName><ForeName>David Misha</ForeName><Initials>DM</Initials><AffiliationInfo><Affiliation>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Yee</LastName><ForeName>Shannon K</ForeName><Initials>SK</Initials><Identifier Source="ORCID">http://orcid.org/0000-0002-1119-9938</Identifier><AffiliationInfo><Affiliation>School of Mechanical Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author><Author ValidYN="Y"><LastName>Losego</LastName><ForeName>Mark D</ForeName><Initials>MD</Initials><Identifier Source="ORCID">http://orcid.org/0000-0002-9810-9834</Identifier><AffiliationInfo><Affiliation>School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.</Affiliation></AffiliationInfo></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType UI="D016428">Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2020</Year><Month>02</Month><Day>13</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Langmuir</MedlineTA><NlmUniqueID>9882736</NlmUniqueID><ISSNLinking>0743-7463</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="pubmed"><Year>2020</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2020</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2020</Year><Month>2</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">32052971</ArticleId><ArticleId IdType="doi">10.1021/acs.langmuir.9b03273</ArticleId></ArticleIdList></PubmedData></pubmed><affiliations><list><country><li>États-Unis</li></country></list><tree><country name="États-Unis"><noRegion><name sortKey="Gregory, Shawn A" sort="Gregory, Shawn A" uniqKey="Gregory S" first="Shawn A" last="Gregory">Shawn A. Gregory</name></noRegion><name sortKey="Gregory, Shawn A" sort="Gregory, Shawn A" uniqKey="Gregory S" first="Shawn A" last="Gregory">Shawn A. Gregory</name><name sortKey="Losego, Mark D" sort="Losego, Mark D" uniqKey="Losego M" first="Mark D" last="Losego">Mark D. Losego</name><name sortKey="Mcgettigan, Connor P" sort="Mcgettigan, Connor P" uniqKey="Mcgettigan C" first="Connor P" last="Mcgettigan">Connor P. Mcgettigan</name><name sortKey="Mcguinness, Emily K" sort="Mcguinness, Emily K" uniqKey="Mcguinness E" first="Emily K" last="Mcguinness">Emily K. Mcguinness</name><name sortKey="Rodin, David Misha" sort="Rodin, David Misha" uniqKey="Rodin D" first="David Misha" last="Rodin">David Misha Rodin</name><name sortKey="Yee, Shannon K" sort="Yee, Shannon K" uniqKey="Yee S" first="Shannon K" last="Yee">Shannon K. Yee</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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